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| TYPE | DESCRIPTION |
| Source Content uid: | IRF520NPBF |
| Manufacturer Part Number: | IRF520NPBF |
| Rohs Code: | Yes |
| Part Life Cycle Code: | Active |
| Package Description: | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code: | compliant |
| ECCN Code: | EAR99 |
| Manufacturer: | Infineon Technologies AG |
| Risk Rank: | 0.76 |
| Additional Feature: | AVALANCHE RATED, HIGH RELIABILITY |
| Avalanche Energy Rating (Eas): | 91 mJ |
| Case Connection: | DRAIN |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min: | 100 V |
| Drain Current-Max (Abs) (ID): | 9.5 A |
| Drain Current-Max (ID): | 9.7 A |
| Drain-source On Resistance-Max: | 0.2 Ω |
| FET Technology: | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code: | TO-220AB |
| JESD-30 Code: | R-PSFM-T3 |
| Number of Elements: | 1 |
| Number of Terminals: | 3 |
| Operating Mode: | ENHANCEMENT MODE |
| Operating Temperature-Max: | 175 °C |
| Package Body Material: | PLASTIC/EPOXY |
| Package Shape: | RECTANGULAR |
| Package Style: | FLANGE MOUNT |
| Peak Reflow Temperature (Cel): | NOT SPECIFIED |
| Polarity/Channel Type: | N-CHANNEL |
| Power Dissipation-Max (Abs): | 47 W |
| Pulsed Drain Current-Max (IDM): | 38 A |
| Qualification Status: | Not Qualified |
| Subcategory: | FET General Purpose Power |
| Surface Mount: | NO |
| Terminal Form: | THROUGH-HOLE |
| Terminal Position: | SINGLE |
| Time@Peak Reflow Temperature-Max (s): | NOT SPECIFIED |
| Transistor Application: | SWITCHING |
| Transistor Element Material: | SILICON |
