specifications
PDF(1)
| TYPE | DESCRIPTION |
| Mfr | Toshiba Electronic Devices and Storage Corporation |
| Series | U-MOSIX-H |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.65mOhm @ 50A, 10V |
| Power Dissipation (Max) | 960mW (Ta), 210W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | 8-SOP Advance (5x5.75) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10000 pF @ 15 V |